MMBT2907 / MMBT2907a pnp silicon epitaxial planar transistor for switching and af amplifier applications. the transistor is subdivided into one group according to its dc current gain. absolute maximum ratings (t a = 25 o c) parameter symbol value unit collector base voltage -v cbo 60 v collector emitter voltage MMBT2907 MMBT2907a -v ceo 40 60 v emitter base voltage -v ebo 5 v collector current -i c 600 ma power dissipation p tot 350 mw junction temperature t j 150 o c storage temperature range t stg - 55 to + 150 o c sot-23 plastic package
MMBT2907 / MMBT2907a characteristics at t a = 25 o c parameter symbol min. max. unit dc current gain at -i c = 0.1 ma, -v ce = 10 v at -i c = 1 ma, -v ce = 10 v at -i c = 10 ma, -v ce = 10 v at -i c = 150 ma, -v ce = 10 v at -i c = 500 ma, -v ce = 10 v MMBT2907 MMBT2907a MMBT2907 MMBT2907a MMBT2907 MMBT2907a MMBT2907 MMBT2907a h fe h fe h fe h fe h fe h fe h fe h fe h fe 35 75 50 100 75 100 100 30 50 - - - - - - 300 - - - - - - - - - - - collector base cutoff current at -v cb = 50 v MMBT2907 MMBT2907a -i cbo -i cbo - - 20 10 na na collector base breakdown voltage at -i c = 10 a -v (br)cbo 60 - v collector emitter breakdown voltage at -i c = 10 ma MMBT2907 MMBT2907a -v (br)ceo -v (br)ceo 40 60 - - v v emitter base breakdown voltage at -i e = 10 a -v (br)ebo 5 - v collector saturation voltage at -i c = 150 ma, -i b = 15 ma at -i c = 500 ma, -i b = 50 ma -v ce(sat) -v ce(sat) - - 0.4 1.6 v v base saturation voltage at -i c = 150 ma, -i b = 15 ma at -i c = 500 ma, -i b = 50 ma -v be(sat) -v be(sat) - - 1.3 2.6 v v gain bandwidth product at -i c = 50 ma , -v ce = 20 v, f = 100 mhz f t 200 - mhz collector output capacitance at -v cb = 10 v, f = 1 mhz c ob - 8 pf turn-on time at -v cc = 30 v, -i c = 150 ma, -i b1 = 15 ma t on - 45 ns delay time at -v cc = 30 v, -i c = 150 ma, -i b1 = 15 ma t d - 10 ns rise time at -v cc = 30 v, -i c = 150 ma, -i b1 = 15 ma t r - 40 ns turn-off time at -v cc = 6 v, -i c = 150 ma, -i b1 = -i b2 = 15 ma t off - 100 ns storage time at -v cc = 6 v, -i c = 150 ma, -i b1 = -i b2 = 15 ma t s - 80 ns fall time at -v cc = 6 v, -i c = 150 ma, -i b1 = -i b2 = 15 ma t f - 30 ns
MMBT2907 / MMBT2907a
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